MTSF3N02HDR2 |
RFQ for MTSF3N02HDR2 Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| MTSF3N02HDR2 | - | SSOP-8 | 99+ |
Micro8E devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to achieve lowest possible onresistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the draintosource diode has a very low reverse recovery time. Micro8E devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dcdc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
Features |
| • Miniature Micro8 Surface Mount Package - Saves Board Space• Extremely Low Profile (<1.1mm) for thin applications such as PCMCIA cards• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life• Logic Level Gate Drive - Can Be Driven by Logic ICs• Diode Is Characterized for Use In Bridge Circuits• Diode Exhibits High Speed, With Soft Recovery• IDSS Specified at Elevated Temperature• Avalanche Energy Specified• Mounting Information for Micro8 Package Provided |
| Rating | Symbol | Value | Unit | |
| DraintoSource Voltage | VDSS | 20 | V | |
| DraintoGate Voltage (RGS = 1.0 MW) | VDGR | 20 | V | |
| GatetoSource Voltage - Continuous |
VGS |
±8 |
V | |
| 1 inch SQ. FR4 or G10 PCB Figure 1 below Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
70 1.79 14.29 6.1 4.9 49 |
°C/W Watts mW/°C A A A |
| Minimum FR4 or G10 PCB Figure 2 below Steady State |
Thermal Resistance - Junction to Ambient Total Power Dissipation @ TA = 25°C Linear Derating Factor Drain Current - Continuous @ TA = 25°C Continuous @ TA = 70°C Pulsed Drain Current (1) |
RTHJA PD ID ID IDM |
160 0.78 6.25 4.0 3.2 32 |
°C/W Watts mW/°C A A A |
| Operating and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C | |
